The formation, phase relations, crystal chemistry and physical properties were investigated for the solid solution Ba8ZnxGe46−x−yy deriving from binary clathrate Ba8Ge433 with a solubility limit of 8 Zn atoms per formula unit at 800 ◦C ( is a vacancy). Single-crystal x-ray data throughout the homogeneity region confirm the clathrate type I structure with cubic primitive space group type Pm¯3n. Temperature-dependent x-ray spectra as well as heat capacity define a lowlying, almost localized, phonon branch, whereas neutron spectroscopy indicates a phonon mode with significant correlations. The transport properties are strongly determined by the Ge/Zn ratio in the framework of the structure. Increasing Zn content drives the system towards a metal-to-insulator transition; for example, Ba8Zn2.1Ge41.52.4 shows metallic behaviour at low temperatures, whilst at high temperatures semiconducting features become obvious. A model based on a gap of the electronic density of states slightly above the Fermi energy was able to explain the temperature dependences of the transport properties. The thermal conductivity exhibits a pronounced low-temperature maximum, dominated by the lattice contribution, while at higher temperatures the electronic part gains weight. Zn-rich compositions reveal attractive Seebeck coefficients approaching −180 μV K−1 at 700 K.

Ternary clathrates Ba-Zn-Ge: phase equilibria, crystal chemistry and physical properties

FORNASARI, LUCIA;MARABELLI, FRANCO;
2007-01-01

Abstract

The formation, phase relations, crystal chemistry and physical properties were investigated for the solid solution Ba8ZnxGe46−x−yy deriving from binary clathrate Ba8Ge433 with a solubility limit of 8 Zn atoms per formula unit at 800 ◦C ( is a vacancy). Single-crystal x-ray data throughout the homogeneity region confirm the clathrate type I structure with cubic primitive space group type Pm¯3n. Temperature-dependent x-ray spectra as well as heat capacity define a lowlying, almost localized, phonon branch, whereas neutron spectroscopy indicates a phonon mode with significant correlations. The transport properties are strongly determined by the Ge/Zn ratio in the framework of the structure. Increasing Zn content drives the system towards a metal-to-insulator transition; for example, Ba8Zn2.1Ge41.52.4 shows metallic behaviour at low temperatures, whilst at high temperatures semiconducting features become obvious. A model based on a gap of the electronic density of states slightly above the Fermi energy was able to explain the temperature dependences of the transport properties. The thermal conductivity exhibits a pronounced low-temperature maximum, dominated by the lattice contribution, while at higher temperatures the electronic part gains weight. Zn-rich compositions reveal attractive Seebeck coefficients approaching −180 μV K−1 at 700 K.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/133077
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