A linear power amplifier for 3G cellular applications is presented. The amplifier operates in common-base configuration and can sustain output voltages in excess of BVCEO. The chip, implemented in a 0.25mum SiGe:C technology, occupies 2.76 mm2. When operated from a 4.5 V supply, the amplifier has a measured power gain of 20 dB at 1.85 GHz. At 1 dB Compression Point, the amplifier delivers 27 dBm with a power-added efficiency of 33%. Saturated output power is 28.2 dBm with 37% power-added efficiency.
A common-base linear rf power amplifier for 3G cellular applications
AVANZO, FLAVIO;DE PAOLA, FRANCESCO MARIA;MANSTRETTA, DANILO
2008-01-01
Abstract
A linear power amplifier for 3G cellular applications is presented. The amplifier operates in common-base configuration and can sustain output voltages in excess of BVCEO. The chip, implemented in a 0.25mum SiGe:C technology, occupies 2.76 mm2. When operated from a 4.5 V supply, the amplifier has a measured power gain of 20 dB at 1.85 GHz. At 1 dB Compression Point, the amplifier delivers 27 dBm with a power-added efficiency of 33%. Saturated output power is 28.2 dBm with 37% power-added efficiency.File in questo prodotto:
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