The several processes required to achieve Er luminescence in Si are investigated. In particular, the role of Er-O interactions to obtain the incorporation of high Er concentrations, electrically and optically active, in crystalline Si is investigated. It is found that a large enhancement in the electrical activation of Er (up to three orders of magnitude) is obtained by co-implanting Er with O at 573K or at 77 K. The optical efficiency of this sample has been studied by photoluminescence. Studies on the luminescence intensity as a function of the pump power gave important information on the mechanisms underlying Er luminescence in Si and its competing phenomena. These data are presented and discusses.

Er luminescence in Si: a critical balance between optical activity and pumping efficiency

BELLANI, VITTORIO;
1993-01-01

Abstract

The several processes required to achieve Er luminescence in Si are investigated. In particular, the role of Er-O interactions to obtain the incorporation of high Er concentrations, electrically and optically active, in crystalline Si is investigated. It is found that a large enhancement in the electrical activation of Er (up to three orders of magnitude) is obtained by co-implanting Er with O at 573K or at 77 K. The optical efficiency of this sample has been studied by photoluminescence. Studies on the luminescence intensity as a function of the pump power gave important information on the mechanisms underlying Er luminescence in Si and its competing phenomena. These data are presented and discusses.
1993
1558991972
9781558991972
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/148724
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