Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement.

Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs

MAZZANTI, ANDREA;
2002-01-01

Abstract

Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/208864
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