A 65 nm CMOS Class-G headphone driver operates from ±1.4 V, ±0.35 V supplies. At low power level it uses the low voltage supply to reduce the dissipation to 1.63 mW @ Pout = 0.5 mW into 32 ¿. At higher power level, the smooth transition between the voltage supply rails allows a THD+N better than -80 dB for Pout ¿ 16 mW into 32 ¿. The SNR is 101 dB, quiescent power is 0.41 mW and active die area is 0.14 mm2.

Class-G headphone driver in 65nm CMOS technology

LOLLIO, ALEX;CASTELLO, RINALDO
2010-01-01

Abstract

A 65 nm CMOS Class-G headphone driver operates from ±1.4 V, ±0.35 V supplies. At low power level it uses the low voltage supply to reduce the dissipation to 1.63 mW @ Pout = 0.5 mW into 32 ¿. At higher power level, the smooth transition between the voltage supply rails allows a THD+N better than -80 dB for Pout ¿ 16 mW into 32 ¿. The SNR is 101 dB, quiescent power is 0.41 mW and active die area is 0.14 mm2.
2010
9781424460335
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/216722
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