Idler beam quality at 6.3 µm from HgGa2S4 OPO is compared for linear, planar ring and RISTRA cavities. The last one produces smooth, circular profile and much higher focal fluence.
HgGa2S4–based RISTRA OPO pumped at 1064 nm
AGNESI, ANTONIANGELO;
2014-01-01
Abstract
Idler beam quality at 6.3 µm from HgGa2S4 OPO is compared for linear, planar ring and RISTRA cavities. The last one produces smooth, circular profile and much higher focal fluence.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
