IRIS
BRAGA, STEFANIA
 Distribuzione geografica
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Continente #
NA - Nord America 583
EU - Europa 525
AS - Asia 277
SA - Sud America 13
AF - Africa 2
OC - Oceania 2
Totale 1.402
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Nazione #
US - Stati Uniti d'America 581
CN - Cina 225
IE - Irlanda 157
UA - Ucraina 85
RU - Federazione Russa 70
FI - Finlandia 47
DE - Germania 45
SG - Singapore 45
SE - Svezia 41
IT - Italia 34
GB - Regno Unito 24
BR - Brasile 11
BE - Belgio 10
FR - Francia 7
ES - Italia 3
JP - Giappone 2
AU - Australia 1
BD - Bangladesh 1
CA - Canada 1
CO - Colombia 1
DK - Danimarca 1
DZ - Algeria 1
EC - Ecuador 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
LA - Repubblica Popolare Democratica del Laos 1
MU - Mauritius 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
PT - Portogallo 1
Totale 1.402
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Città #
Dublin 157
Chandler 130
Jacksonville 106
Nanjing 92
Ann Arbor 56
Nanchang 35
Boardman 34
Ashburn 25
Lawrence 21
Medford 21
Princeton 21
Hebei 20
Changsha 19
Jiaxing 19
Wilmington 19
Singapore 15
Hangzhou 11
Shenyang 11
Brussels 10
Woodbridge 10
Moscow 8
Tianjin 8
Milan 7
Falkenstein 5
Helsinki 5
Los Angeles 5
Pavia 5
Seattle 4
Barcelona 3
Dearborn 3
Kunming 3
Norwalk 3
Pedrengo 3
Verona 3
Augusta 2
Houston 2
Monmouth Junction 2
New York 2
Tokyo 2
Amman 1
Ardabil 1
Auburn Hills 1
Auckland 1
Bogotá 1
Borås 1
Boston 1
Cachoeiro de Itapemirim 1
Cuiabá 1
Curuçá 1
Guangzhou 1
Guayaquil 1
Islamabad 1
Jinan 1
Joinville 1
Jundiaí 1
Kingston 1
Lavras 1
Lisbon 1
Niterói 1
Orange 1
Praia Grande 1
Redmond 1
Sertãozinho 1
Sorocaba 1
Tappahannock 1
Tupã 1
Vientiane 1
Zhengzhou 1
Totale 936
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Nome #
On the effect of cell geometry on the amorphization process in phase-change memories 90
Modeling of partial-RESET dynamics in Phase Change Memories 87
Effects of alloy composition on multilevel operation in self-heating Phase Change Memories 85
Data retention of partial-SET states in phase change memories 84
Voltage-driven multilevel programming in phase change memories 81
Theoretical analysis of the RESET operation in phase-change memories 80
Effect of technology scaling on program and read window in phase change memories 74
N-doped GeTe as performance booster for embedded Phase-Change Memories 72
On voltage-driven multilevel programming in phase change memory cells 71
Statistical modeling of bit distributions in phase change memories 69
Low-field resistance drift in partial-SET states in Phase Change Memories 69
Transient effects in partial-RESET programming of phase change memory cells 67
Experimental analysis of partial-SET state stability in phase change memories 67
Dependence of resistance drift on the amorphous cap size in phase change memory arrays 66
An integrated multi-physics approach to the modeling of a phase-change memory device 64
Impact of technology scaling of phase-change memory performance 63
Feasibility study of partial-RESET multilevel programming in Phase Change Memories 62
Drift-driven investigation of phase distribution in Phase-Change Memories 61
Voltage-driven partial-RESET multilevel programming in phase-change memories 50
Program and read scaling trade-offs in phase change memories 49
Experimental analysis of RESET resistance distribution in phase change memories 39
Totale 1.450
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Categoria #
all - tutte 5.877
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.877
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202025 0 0 0 0 0 0 0 0 0 24 1 0
2020/2021169 22 14 5 20 1 22 2 20 6 27 24 6
2021/2022109 2 2 6 4 2 6 3 10 4 4 14 52
2022/2023394 32 47 4 21 36 34 0 19 182 1 12 6
2023/202469 9 22 0 5 4 19 0 8 0 1 0 1
2024/2025185 5 24 6 27 3 4 26 9 81 0 0 0
Totale 1.450