IRIS
BRAGA, STEFANIA
 Distribuzione geografica
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Continente #
NA - Nord America 577
EU - Europa 447
AS - Asia 252
OC - Oceania 2
AF - Africa 1
SA - Sud America 1
Totale 1.280
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Nazione #
US - Stati Uniti d'America 576
CN - Cina 225
IE - Irlanda 157
UA - Ucraina 85
FI - Finlandia 47
SE - Svezia 41
DE - Germania 39
IT - Italia 31
GB - Regno Unito 24
SG - Singapore 22
BE - Belgio 10
FR - Francia 7
ES - Italia 3
AU - Australia 1
CA - Canada 1
DK - Danimarca 1
EC - Ecuador 1
IR - Iran 1
JO - Giordania 1
JP - Giappone 1
LA - Repubblica Popolare Democratica del Laos 1
MU - Mauritius 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
PT - Portogallo 1
RU - Federazione Russa 1
Totale 1.280
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Città #
Dublin 157
Chandler 130
Jacksonville 106
Nanjing 92
Ann Arbor 56
Nanchang 35
Boardman 34
Ashburn 25
Lawrence 21
Medford 21
Princeton 21
Hebei 20
Changsha 19
Jiaxing 19
Wilmington 19
Singapore 15
Hangzhou 11
Shenyang 11
Brussels 10
Woodbridge 10
Tianjin 8
Milan 7
Helsinki 5
Los Angeles 5
Pavia 5
Seattle 4
Barcelona 3
Dearborn 3
Kunming 3
Norwalk 3
Verona 3
Augusta 2
Houston 2
Monmouth Junction 2
New York 2
Amman 1
Ardabil 1
Auburn Hills 1
Auckland 1
Borås 1
Boston 1
Guangzhou 1
Guayaquil 1
Islamabad 1
Jinan 1
Lisbon 1
Orange 1
Redmond 1
Tappahannock 1
Tokyo 1
Vientiane 1
Zhengzhou 1
Totale 906
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Nome #
On the effect of cell geometry on the amorphization process in phase-change memories 81
Effects of alloy composition on multilevel operation in self-heating Phase Change Memories 80
Data retention of partial-SET states in phase change memories 79
Modeling of partial-RESET dynamics in Phase Change Memories 78
Theoretical analysis of the RESET operation in phase-change memories 77
Voltage-driven multilevel programming in phase change memories 73
N-doped GeTe as performance booster for embedded Phase-Change Memories 70
Effect of technology scaling on program and read window in phase change memories 69
Low-field resistance drift in partial-SET states in Phase Change Memories 64
Statistical modeling of bit distributions in phase change memories 63
Transient effects in partial-RESET programming of phase change memory cells 63
Experimental analysis of partial-SET state stability in phase change memories 62
On voltage-driven multilevel programming in phase change memory cells 61
Impact of technology scaling of phase-change memory performance 57
An integrated multi-physics approach to the modeling of a phase-change memory device 56
Dependence of resistance drift on the amorphous cap size in phase change memory arrays 56
Drift-driven investigation of phase distribution in Phase-Change Memories 56
Feasibility study of partial-RESET multilevel programming in Phase Change Memories 55
Voltage-driven partial-RESET multilevel programming in phase-change memories 47
Program and read scaling trade-offs in phase change memories 46
Experimental analysis of RESET resistance distribution in phase change memories 35
Totale 1.328
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Categoria #
all - tutte 5.000
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.000
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202070 0 0 0 0 0 17 8 20 0 24 1 0
2020/2021169 22 14 5 20 1 22 2 20 6 27 24 6
2021/2022109 2 2 6 4 2 6 3 10 4 4 14 52
2022/2023394 32 47 4 21 36 34 0 19 182 1 12 6
2023/202469 9 22 0 5 4 19 0 8 0 1 0 1
2024/202563 5 24 6 27 1 0 0 0 0 0 0 0
Totale 1.328