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EnglishPolariton lasing is demonstrated on the zero-dimensional states of single GaAs=GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10^4. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.
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| Titolo: | Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities | |
| Autori: | ||
| Data di pubblicazione: | 2008 | |
| Rivista: | ||
| Abstract: | Polariton lasing is demonstrated on the zero-dimensional states of single GaAs=GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10^4. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode. | |
| Handle: | http://hdl.handle.net/11571/100301 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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