Polariton lasing is demonstrated on the zero-dimensional states of single GaAs=GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10^4. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.
Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities
BAJONI, DANIELE;
2008-01-01
Abstract
Polariton lasing is demonstrated on the zero-dimensional states of single GaAs=GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10^4. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.File in questo prodotto:
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