We report on electrical injection of excitons in a quantum well placed in the intrinsic region of a p–i–n photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission spectra with increasing current are signatures of the excitonic character of the emission. This structure is ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under electrical injection.

Electroluminescence of excitons in an InGaAs quantum well

BAJONI, DANIELE;
2007

Abstract

We report on electrical injection of excitons in a quantum well placed in the intrinsic region of a p–i–n photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission spectra with increasing current are signatures of the excitonic character of the emission. This structure is ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under electrical injection.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/100306
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