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EnglishWe report a systematic study of several GaAs-Al(x)Ga(1-x)As semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.
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http://hdl.handle.net/11571/100594| Titolo: | Electronic structure and vertical transport in random dimer superlattices |
| Autori interni: | BELLANI, VITTORIO PARRAVICINI, GIANBATTISTA |
| Data di pubblicazione: | 2001 |
| Rivista: | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS |
| Abstract: | We report a systematic study of several GaAs-Al(x)Ga(1-x)As semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder. |
| Handle: | http://hdl.handle.net/11571/100594 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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