We report a systematic study of several GaAs-Al(x)Ga(1-x)As semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.

Electronic structure and vertical transport in random dimer superlattices

BELLANI, VITTORIO;PARRAVICINI, GIANBATTISTA;
2001

Abstract

We report a systematic study of several GaAs-Al(x)Ga(1-x)As semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/100594
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