We study GaAs-Al(x)Ga(1−x)As superlattices where the heights of the barriers are modulated by a Gaussian profile. Such structures present bands of almost unscattered electronic states. The calculated energy levels of the superlattice agree well with the photoluminescence spectra recorded at low temperature.

Gaussian semiconductor superlattice

BELLANI, VITTORIO;PARRAVICINI, GIANBATTISTA
2000

Abstract

We study GaAs-Al(x)Ga(1−x)As superlattices where the heights of the barriers are modulated by a Gaussian profile. Such structures present bands of almost unscattered electronic states. The calculated energy levels of the superlattice agree well with the photoluminescence spectra recorded at low temperature.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/100601
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