We characterized the electronic properties of ordered and intentionally disordered GaAs–Al(x)Ga(1−xAs) superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry in the near band-edge region. The spectra have been compared to the calculate electronic structure. The optical transitions in the various superlattices show specific features related to their different electronic structure.

Spectroscopic ellipsometry of intentionally disordered superlattices

BELLANI, VITTORIO;PARRAVICINI, GIANBATTISTA;
2004

Abstract

We characterized the electronic properties of ordered and intentionally disordered GaAs–Al(x)Ga(1−xAs) superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry in the near band-edge region. The spectra have been compared to the calculate electronic structure. The optical transitions in the various superlattices show specific features related to their different electronic structure.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/100605
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact