We characterized the electronic properties of ordered and intentionally disordered GaAs–Al(x)Ga(1−xAs) superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry in the near band-edge region. The spectra have been compared to the calculate electronic structure. The optical transitions in the various superlattices show specific features related to their different electronic structure.
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Titolo: | Spectroscopic ellipsometry of intentionally disordered superlattices | |
Autori: | ||
Data di pubblicazione: | 2004 | |
Rivista: | ||
Abstract: | We characterized the electronic properties of ordered and intentionally disordered GaAs–Al(x)Ga(1−xAs) superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry in the near band-edge region. The spectra have been compared to the calculate electronic structure. The optical transitions in the various superlattices show specific features related to their different electronic structure. | |
Handle: | http://hdl.handle.net/11571/100605 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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