CdTe layers were grown by metalorganic vapor phase epitaxy (MOVPE) on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C and time in the range of 2–4 h using dimethyl-cadmium and diisopropil-tellurium as precursors. The layers were studied by scanning electron microscopy, Rutherford backscattering spectroscopy, and high resolution low-temperature photoluminescence spectroscopy. The surface morphology and RBS and PL spectra of CdTe MOVPE layers are reported and the substrate effect on the layer properties is demonstrated.
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Titolo: | Substrate effect on CdT layers grown by metalorganic vapor phase epitaxy |
Autori: | |
Data di pubblicazione: | 1997 |
Rivista: | |
Abstract: | CdTe layers were grown by metalorganic vapor phase epitaxy (MOVPE) on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C and time in the range of 2–4 h using dimethyl-cadmium and diisopropil-tellurium as precursors. The layers were studied by scanning electron microscopy, Rutherford backscattering spectroscopy, and high resolution low-temperature photoluminescence spectroscopy. The surface morphology and RBS and PL spectra of CdTe MOVPE layers are reported and the substrate effect on the layer properties is demonstrated. |
Handle: | http://hdl.handle.net/11571/100614 |
Appare nelle tipologie: | 1.1 Articolo in rivista |