We have studied the evolution of Fano resonances with an external magnetic field, applied in the Faraday configuration, in two- and three-dimensional semiconductors, by low-temperature photoluminescence excitation spectroscopy. The behavior of the spectra with increasing magnetic field strength depends strongly on the dimensionality of the system: Fano resonances emerge in 3D systems, while those lines which are asymmetric at zero field in 2D systems become more Lorentzian-like due to the suppression of interference paths.

Evolution of Fano resonances in two- and three dimensional semiconductors with a magnetic fiel

BELLANI, VITTORIO;
1996-01-01

Abstract

We have studied the evolution of Fano resonances with an external magnetic field, applied in the Faraday configuration, in two- and three-dimensional semiconductors, by low-temperature photoluminescence excitation spectroscopy. The behavior of the spectra with increasing magnetic field strength depends strongly on the dimensionality of the system: Fano resonances emerge in 3D systems, while those lines which are asymmetric at zero field in 2D systems become more Lorentzian-like due to the suppression of interference paths.
1996
The Physics category includes resources of a broad, general nature that contain materials from all areas of physics, The category also includes resources specifically concerned with the following physics sub-fields: mathematical physics, particle and nuclear physics, physics of fluids and plasmas, quantum physics, and theoretical physics.
Sì, ma tipo non specificato
Inglese
Internazionale
STAMPA
97
6
459
464
5
olid State Communications is an international medium for the publication of short communications on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation.
Fano resonances; Magnetic field; Semicondutor
http://dx.doi.org/10.1016/0038-1098(95)00699-0
6
info:eu-repo/semantics/article
262
Bellani, Vittorio; E., Pérez; S., Zimmermann; L., Viña; R., Hey; K., Ploog
1 Contributo su Rivista::1.1 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/100616
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