IRIS

We have studied the dimensionality dependence of the behavior of Fano resonances in the photoluminescence excitation spectra of GaAs---AlxGa1−xAs heterostructures in a magnetic field applied in the Faraday configuration. A striking difference is observed between quasi-two and quasi-three-dimensional systems: while the Fano profiles evolve into Lorentzian lineshapes in two-dimensional systems, Fano resonances emerge from the continuum in three-dimensional-systems with increasing magnetic field.

Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells

BELLANI, VITTORIO;
1996-01-01

Abstract

We have studied the dimensionality dependence of the behavior of Fano resonances in the photoluminescence excitation spectra of GaAs---AlxGa1−xAs heterostructures in a magnetic field applied in the Faraday configuration. A striking difference is observed between quasi-two and quasi-three-dimensional systems: while the Fano profiles evolve into Lorentzian lineshapes in two-dimensional systems, Fano resonances emerge from the continuum in three-dimensional-systems with increasing magnetic field.
1996
The Physics category includes resources of a broad, general nature that contain materials from all areas of physics, The category also includes resources specifically concerned with the following physics sub-fields: mathematical physics, particle and nuclear physics, physics of fluids and plasmas, quantum physics, and theoretical physics.
SOLID-STATE ELECTRONICS
sì
WOS:A1996UN20700017
2-s2.0-0029722362
Sì, ma tipo non specificato
Inglese
Internazionale
STAMPA
40
1-8
85
88
4
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design, (2) optical, electrical, morphological characterization techniques and parameter extraction, (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, sensors, and MEMS based on semiconductor and alternative electronic materials.
Photoluminescence excitation; GaAs; Dimensionality
http://dx.doi.org/10.1016/0038-1101(95)00218-9
6
info:eu-repo/semantics/article
262
Bellani, Vittorio; E., Pérez; S., Zimmermann; L., Viña; R., Hey; K., Ploog
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/100617
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 4
social impact