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We have studied the exciton dynamics and spin-flip processes in tensile strained GaAs1 − yPy/Ga0.65Al0.35As quantum wells as a function of phosphorous composition and well width. The strain introduced by the presence of phosphorous modifies the valence band structure. This strongly affects the characteristic times of exciton formation and polarization decay. However, the recombination time is essentially determined by the light- or heavy-character of the excitonic ground state.

Exciton dynamics and spin-flip in tensile strained quantum wells

BELLANI, VITTORIO;
1996-01-01

Abstract

We have studied the exciton dynamics and spin-flip processes in tensile strained GaAs1 − yPy/Ga0.65Al0.35As quantum wells as a function of phosphorous composition and well width. The strain introduced by the presence of phosphorous modifies the valence band structure. This strongly affects the characteristic times of exciton formation and polarization decay. However, the recombination time is essentially determined by the light- or heavy-character of the excitonic ground state.
1996
The Physics category includes resources of a broad, general nature that contain materials from all areas of physics, The category also includes resources specifically concerned with the following physics sub-fields: mathematical physics, particle and nuclear physics, physics of fluids and plasmas, quantum physics, and theoretical physics.
SOLID-STATE ELECTRONICS
sì
WOS:A1996UN20700152
2-s2.0-0029698529
Sì, ma tipo non specificato
Inglese
Internazionale
STAMPA
40
1-8
737
740
4
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design, (2) optical, electrical, morphological characterization techniques and parameter extraction, (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, sensors, and MEMS based on semiconductor and alternative electronic materials.
Spin flip; Exciton dynamics; Ultrafast optical spectroscopy
http://dx.doi.org/10.1016/0038-1101(95)00354-1
7
info:eu-repo/semantics/article
262
E., Pérez; Bellani, Vittorio; S., Zimmermann; L., Muñoz; L., Viña; E. S., Koteles; K. M., Lau
1 Contributo su Rivista::1.1 Articolo in rivista
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1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/100618
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