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This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two-port measurement of the s-parameters of the device under test and enables an accurate evaluation of the parasitic effects that limit the performances of these integrated devices

Measurement and modeling of Si integrated inductors

ARCIONI, PAOLO;CASTELLO, RINALDO;SVELTO, FRANCESCO
1998-01-01

Abstract

This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two-port measurement of the s-parameters of the device under test and enables an accurate evaluation of the parasitic effects that limit the performances of these integrated devices
1998
The Electrical and Electronics Engineering category covers resources concerned with applications of electricity, generally those involving current flow through conductors, as in motors and generators. This category also covers the examination of the conduction of electricity through gases or a vacuum as well as through semiconducting materials. Topics include image and signal processing, electromagnetics, electronic components and materials, microwave technology, and microelectronics.
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
sì
Sì, ma tipo non specificato
Inglese
Internazionale
STAMPA
47
V
1372
1378
S-PARAMETERS; ELEMENTAL SEMICONDUCTORS; EQUIVALENT CIRCUITS; INDUCTORS; SILICON; SI; LUMPED ELEMENT MODEL; PARASITIC EFFECTS; SILICON SUBSTRATE; SPIRAL INTEGRATED INDUCTOR; WIDEBAND TWO-PORT MEASUREMENT
5
info:eu-repo/semantics/article
262
Arcioni, Paolo; Castello, Rinaldo; G., DE ASTIS; E., Sacchi; Svelto, Francesco
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/104172
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