A four-quadrant analog multiplier based on a simple, very linear, and fast BiCMOS transconductor using MOS transistors operating in the triode region and NPN bipolar devices is presented. The four quadrant operation is obtained by crosscoupling-in a Gilbert-cell fashion-two transconductors with a third stage used to modulate the transconductances of the former two. A chip prototype of the multiplier has been integrated in a 1.2-μm BiCMOS process to validate the idea. It has been designed to achieve high linearity on both inputs: measured results show a total harmonic distortion (THD) of less than -40 dB with a 3-V peak-to-peak input signal at 5 MHz from a 5-V supply and an output -3 dB bandwidth of 100 MHz while dissipating 4 mW from a 3-V supply. The integrated chip prototype active area is 1 mm2
A 100-MHz 4-mW four-quadrant BiCMOS analog multiplier
CASTELLO, RINALDO
1997
Abstract
A four-quadrant analog multiplier based on a simple, very linear, and fast BiCMOS transconductor using MOS transistors operating in the triode region and NPN bipolar devices is presented. The four quadrant operation is obtained by crosscoupling-in a Gilbert-cell fashion-two transconductors with a third stage used to modulate the transconductances of the former two. A chip prototype of the multiplier has been integrated in a 1.2-μm BiCMOS process to validate the idea. It has been designed to achieve high linearity on both inputs: measured results show a total harmonic distortion (THD) of less than -40 dB with a 3-V peak-to-peak input signal at 5 MHz from a 5-V supply and an output -3 dB bandwidth of 100 MHz while dissipating 4 mW from a 3-V supply. The integrated chip prototype active area is 1 mm2I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
