Lattice-matched, single and multiple InGaP/GaAs/InGaP quantum wells (QWs) were grown at 600 8C by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), with the use of the tertiarybuthylarsine (TBAs) and tertiarybuthylphosphine (TBP) group-V sources. In order to enhance the interface abruptness, different gas switching sequences were exploited during the growth of the interface, and the best results were obtained by inserting a few monolayer-thick GaAsP interlayers (IL), at the direct GaAs-on-InGaP interface.

Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources

GEDDO, MARIO
2004

Abstract

Lattice-matched, single and multiple InGaP/GaAs/InGaP quantum wells (QWs) were grown at 600 8C by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), with the use of the tertiarybuthylarsine (TBAs) and tertiarybuthylphosphine (TBP) group-V sources. In order to enhance the interface abruptness, different gas switching sequences were exploited during the growth of the interface, and the best results were obtained by inserting a few monolayer-thick GaAsP interlayers (IL), at the direct GaAs-on-InGaP interface.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11571/106218
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