CINECA IRIS Institutional Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishThe electronic properties of InxGa(1-x)As(1-y)Ny /GaAs single quantum wells have been investigated by photoluminescence and photoreflectance spectroscopy as a function of temperature. The introduction of nitrogen leads to a sizable slow down in the redshift of the ground state recombination energy with temperature. We explain the observed effects in terms of an anticrossing between states of the conduction band (CB) edge and a N-induced localized level resonant with the CB. The extent of this anticrossing, described by the matrix element V(MN) , is derived from the temperature dependence of the exciton recombination energy in a wide compositional range. The measured functional dependence of V(MN) on nitrogen concentration is compared with results reported in the literature.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
| Titolo: | Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells |
| Autori: | |
| Data di pubblicazione: | 2001 |
| Rivista: | |
| Abstract: | The electronic properties of InxGa(1-x)As(1-y)Ny /GaAs single quantum wells have been investigated by photoluminescence and photoreflectance spectroscopy as a function of temperature. The introduction of nitrogen leads to a sizable slow down in the redshift of the ground state recombination energy with temperature. We explain the observed effects in terms of an anticrossing between states of the conduction band (CB) edge and a N-induced localized level resonant with the CB. The extent of this anticrossing, described by the matrix element V(MN) , is derived from the temperature dependence of the exciton recombination energy in a wide compositional range. The measured functional dependence of V(MN) on nitrogen concentration is compared with results reported in the literature. |
| Handle: | http://hdl.handle.net/11571/106222 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
Copyright © 2021