InxGa(1x)As(1-y)Ny /GaAs single quantum wells emitting at room temperature in the wavelength range 1.3–1.55 micron have been studied by photoluminescence. By increasing temperature, we find that samples containing nitrogen have a luminescence thermal stability and a room temperature emission efficiency higher than that of the corresponding N-free heterostructures. The temperature dependence of the PL line shape shows a progressive carrier detrapping from localized to extended states as T is increased. Finally, the extent of the thermal shift of the free exciton energy for different y indicates that the electron band edge has a localized character which increases with nitrogen content.

Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells

GEDDO, MARIO;
2000

Abstract

InxGa(1x)As(1-y)Ny /GaAs single quantum wells emitting at room temperature in the wavelength range 1.3–1.55 micron have been studied by photoluminescence. By increasing temperature, we find that samples containing nitrogen have a luminescence thermal stability and a room temperature emission efficiency higher than that of the corresponding N-free heterostructures. The temperature dependence of the PL line shape shows a progressive carrier detrapping from localized to extended states as T is increased. Finally, the extent of the thermal shift of the free exciton energy for different y indicates that the electron band edge has a localized character which increases with nitrogen content.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11571/106223
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