We have per formed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs(1-y)Ny/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to : (i ) a progressive passivation of N-related recombination lines for low N content ( y ¤ 0.000 1 ); (ii) a sizable blue shift of the band gap in the "alloy " limit ( y ¤ 0.01 ). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N-H complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs(1-y)Ny.

EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GAAS(1-Y)N(Y) HETEROSTRUCTURES

GEDDO, MARIO;
2001

Abstract

We have per formed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs(1-y)Ny/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to : (i ) a progressive passivation of N-related recombination lines for low N content ( y ¤ 0.000 1 ); (ii) a sizable blue shift of the band gap in the "alloy " limit ( y ¤ 0.01 ). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N-H complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs(1-y)Ny.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11571/106286
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