EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GAAS(1-Y)N(Y) HETEROSTRUCTURES

Bissiri, M.; Gaspari, V.; Baldassarri, G.; Ranalli, F.; Polimeni, A.; Capizzi, M.; Nucara, A.; Geddo, Mario; Fischer, M.; Reinhardt, M.; Forchel, A.

We have per formed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs(1-y)Ny/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to : (i ) a progressive passivation of N-related recombination lines for low N content ( y ¤ 0.000 1 ); (ii) a sizable blue shift of the band gap in the "alloy " limit ( y ¤ 0.01 ). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N-H complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs(1-y)Ny.

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Titolo:	EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GAAS(1-Y)N(Y) HETEROSTRUCTURES
Autori:	M. BISSIRI V. GASPARI G. BALDASSARRI F. RANALLI A. POLIMENI M. CAPIZZI A. NUCARA GEDDO, MARIO M. FISCHER M. REINHARDT A. FORCHEL mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2001
Rivista:	ACTA PHYSICA POLONICA A
Abstract:	We have per formed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs(1-y)Ny/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to : (i ) a progressive passivation of N-related recombination lines for low N content ( y ¤ 0.000 1 ); (ii) a sizable blue shift of the band gap in the "alloy " limit ( y ¤ 0.01 ). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N-H complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs(1-y)Ny.
Handle:	http://hdl.handle.net/11571/106286
Appare nelle tipologie:	1.1 Articolo in rivista

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