We have per formed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs(1-y)Ny/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to : (i ) a progressive passivation of N-related recombination lines for low N content ( y ¤ 0.000 1 ); (ii) a sizable blue shift of the band gap in the "alloy " limit ( y ¤ 0.01 ). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N-H complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs(1-y)Ny.
EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GAAS(1-Y)N(Y) HETEROSTRUCTURES
GEDDO, MARIO;
2001-01-01
Abstract
We have per formed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs(1-y)Ny/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to : (i ) a progressive passivation of N-related recombination lines for low N content ( y ¤ 0.000 1 ); (ii) a sizable blue shift of the band gap in the "alloy " limit ( y ¤ 0.01 ). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N-H complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs(1-y)Ny.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
