Photoreflectance vs photoluminescence measurements of stress-induced quantum wires, obtained by patterning an InGaAs layer pseudomorphic grown on a GaAs well in wire-shaped stressors, are presented and compared. An excellent agreement was found between the experimental results obtained with the two techniques about the lateral confinement of the carriers and evidence is given at room temperature of quantization in two directions by means of photoreflectance.
PHOTOREFLECTANCE VERSUS PHOTOLUMINESCENCE IN STRAIN INDUCED QUANTUM WELL WIRES
GEDDO, MARIO;
1996-01-01
Abstract
Photoreflectance vs photoluminescence measurements of stress-induced quantum wires, obtained by patterning an InGaAs layer pseudomorphic grown on a GaAs well in wire-shaped stressors, are presented and compared. An excellent agreement was found between the experimental results obtained with the two techniques about the lateral confinement of the carriers and evidence is given at room temperature of quantization in two directions by means of photoreflectance.File in questo prodotto:
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