We used far-IR reflectance spectra to characterize a series of Ga0.53In0.47As/InP multiple quantum well and superlattices grown by metal-organic vapour phase epitaxy on InP:S substrates, with well widths ranging from 10 to 92 Å and barriers from 7 to 135 Å. We obtained good fitting to the experimental spectra by taking into account the complex dielectric functions of the quantum structures, in the effective-medium approximation, and using the transfer matrix formalism. The thicknesses of wells and barriers were determined from the fit, and the values of energies and broadening of phonon modes.

Far-IR characterization of GaInAs/InP quantum wells and superlattices

GUIZZETTI, GIORGIO;PATRINI, MADDALENA;
1994-01-01

Abstract

We used far-IR reflectance spectra to characterize a series of Ga0.53In0.47As/InP multiple quantum well and superlattices grown by metal-organic vapour phase epitaxy on InP:S substrates, with well widths ranging from 10 to 92 Å and barriers from 7 to 135 Å. We obtained good fitting to the experimental spectra by taking into account the complex dielectric functions of the quantum structures, in the effective-medium approximation, and using the transfer matrix formalism. The thicknesses of wells and barriers were determined from the fit, and the values of energies and broadening of phonon modes.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/115445
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact