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EnglishSpectral ellipsometry was used to characterize metallic FeSi films epitaxially grown on Si (111) by Molecular Beam Epitaxy. Measurements were performed in the 0.25-0.9 nm range on four samples of different thicknesses. Tg psi and cos D spectra were analyzed in a multilayer model in order to determine the real and the imaginary part of the dielectric function of each sample. Differences between the spectra were attributed to strain effects, depending on the film thickness.
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| Titolo: | Spectroscopic ellipsometry of FeSi films | |
| Autori: | ||
| Data di pubblicazione: | 1993 | |
| Rivista: | ||
| Abstract: | Spectral ellipsometry was used to characterize metallic FeSi films epitaxially grown on Si (111) by Molecular Beam Epitaxy. Measurements were performed in the 0.25-0.9 nm range on four samples of different thicknesses. Tg psi and cos D spectra were analyzed in a multilayer model in order to determine the real and the imaginary part of the dielectric function of each sample. Differences between the spectra were attributed to strain effects, depending on the film thickness. | |
| Handle: | http://hdl.handle.net/11571/115447 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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