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EnglishThe performance of water- and solvent-cast, two-component photoresist films containing poly(2-isopropenyl-2-oxazoline) or poly(2-isopropenyl-2-oxazoline-costyrene) with a photoacid generator has been investigated. These materials afford negative-tone images after deep-UV exposure and development in a suitable medium (water or toluene). Resist solutions prepared from polymers containing at least 80 mol % 2-isopropenyl-2-oxazoline may be cast from and developed in pure water. Features of higher quality can be obtained when the resist is cast from 2-methoxyethanol, probably because side reactions such as partial hydrolysis of the pendant oxazoline rings in aqueous environments are avoided. It was possible to resolve micrometer scale patterns using ca. 200 mJ/cm(2) of irradiation at 254 nm, followed by heating 2 min at 130 degrees C and development in water alone. Image quality and etch resistance were improved using copolymers containing up to 20 mol % of styrene repeat units.
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| Titolo: | Design of Photoresists with Reduced Environmental Impact. 2. Water-soluble Resists Based on Photocrosslinking of Poly(2-isopropenyl-2-oxazoline) | |
| Autori: | ||
| Data di pubblicazione: | 1999 | |
| Rivista: | ||
| Abstract: | The performance of water- and solvent-cast, two-component photoresist films containing poly(2-isopropenyl-2-oxazoline) or poly(2-isopropenyl-2-oxazoline-costyrene) with a photoacid generator has been investigated. These materials afford negative-tone images after deep-UV exposure and development in a suitable medium (water or toluene). Resist solutions prepared from polymers containing at least 80 mol % 2-isopropenyl-2-oxazoline may be cast from and developed in pure water. Features of higher quality can be obtained when the resist is cast from 2-methoxyethanol, probably because side reactions such as partial hydrolysis of the pendant oxazoline rings in aqueous environments are avoided. It was possible to resolve micrometer scale patterns using ca. 200 mJ/cm(2) of irradiation at 254 nm, followed by heating 2 min at 130 degrees C and development in water alone. Image quality and etch resistance were improved using copolymers containing up to 20 mol % of styrene repeat units. | |
| Handle: | http://hdl.handle.net/11571/115490 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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