We report on the experimental characterization, in the telecom C-band, of group-velocity dispersion (D) in 100-nm high rectangular strip waveguides realized by silicon-on-insulator technology. We compare the experimental results with numerical predictions, showing that 100-nm high waveguides exhibit normal dispersion and that the absolute value of the dispersion coefficient D decreases as the waveguide width is increased. D at 1550 nm varies from −8130 to −3900 ps/(nm·km) by increasing the waveguide width from 500 to 800 nm.
Group-velocity dispersion in SOI-based channel waveguides with reduced-height
MARCHETTI, RICCARDO
;VITALI, VALERIO;LACAVA, COSIMO;CRISTIANI, ILARIA;MINZIONI, PAOLO
2017-01-01
Abstract
We report on the experimental characterization, in the telecom C-band, of group-velocity dispersion (D) in 100-nm high rectangular strip waveguides realized by silicon-on-insulator technology. We compare the experimental results with numerical predictions, showing that 100-nm high waveguides exhibit normal dispersion and that the absolute value of the dispersion coefficient D decreases as the waveguide width is increased. D at 1550 nm varies from −8130 to −3900 ps/(nm·km) by increasing the waveguide width from 500 to 800 nm.File in questo prodotto:
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