Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the quality factor. Optical characterization of several individual cavity replicas resulted in an average unloaded quality factor Q = 16 900 at the resonant wavelength λ ∼ 1:3 μm, with a maximal measured Q value of 22 500. The statistics of both the quality factor and the resonant wavelength are well explained by first-principles simulations including fabrication disorder and background optical absorption

Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared

GALLI, MATTEO;
2014-01-01

Abstract

Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the quality factor. Optical characterization of several individual cavity replicas resulted in an average unloaded quality factor Q = 16 900 at the resonant wavelength λ ∼ 1:3 μm, with a maximal measured Q value of 22 500. The statistics of both the quality factor and the resonant wavelength are well explained by first-principles simulations including fabrication disorder and background optical absorption
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/1186122
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