The research activity carried out in this work is relevant to the design and characterization of high density analog circuits for semiconductor pixel detectors. This activity has been developed in the framework of the CERN RD53 collaboration, whose aim is the design of the next generation of hybrid pixel readout chips for the ATLAS and CMS phase 2 pixel upgrades. In this work, the development of two IP blocks is presented and discussed. In particular, a rad-hard bandgap voltage reference and a differential IO link have been designed and characterized. They will be included in the RD53A demonstrator chip, in particular, in the monitoring and IO sections.
HIGH DENSITY ANALOG CIRCUITS FOR SEMICONDUCTOR PIXEL DETECTORS
DE CANIO, FRANCESCO
2017-02-22
Abstract
The research activity carried out in this work is relevant to the design and characterization of high density analog circuits for semiconductor pixel detectors. This activity has been developed in the framework of the CERN RD53 collaboration, whose aim is the design of the next generation of hybrid pixel readout chips for the ATLAS and CMS phase 2 pixel upgrades. In this work, the development of two IP blocks is presented and discussed. In particular, a rad-hard bandgap voltage reference and a differential IO link have been designed and characterized. They will be included in the RD53A demonstrator chip, in particular, in the monitoring and IO sections.| File | Dimensione | Formato | |
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