We propose a self-consistent site-dependent Hubbard U approach for density functional theory (DFT)+U calculations of defects in complex transition metal oxides, using Hubbard parameters computed via linear response theory. The formation of a defect locally perturbs the chemical environment of Hubbard sites in its vicinity, resulting in different Hubbard U parameters for different sites. Using oxygen vacancies in SrMnO3 as a model system, we investigate the dependence of U on the chemical environment and study its influence on the structural, electronic, and magnetic properties of defective bulk and strained thin-film structures. Our results show that a self-consistentU improves the description of stoichiometric bulk SrMnO3 with respect to generalized gradient approximation (GGA) or GGA+U calculations using an empiricalU. For defective systems,U changes as a function of the distance of the Hubbard site from the defect, its oxidation state, and the magnetic phase of the bulk structure. Taking into account this dependence, in turn, affects the computed defect formation energies and the predicted strain- and/or defect-induced magnetic phase transitions, especially when occupied localized states appear in the band gap of the material upon defect creation.

Self-consistent site-dependent DFT+ U study of stoichiometric and defective SrMnO3

Cococcioni M.;
2019-01-01

Abstract

We propose a self-consistent site-dependent Hubbard U approach for density functional theory (DFT)+U calculations of defects in complex transition metal oxides, using Hubbard parameters computed via linear response theory. The formation of a defect locally perturbs the chemical environment of Hubbard sites in its vicinity, resulting in different Hubbard U parameters for different sites. Using oxygen vacancies in SrMnO3 as a model system, we investigate the dependence of U on the chemical environment and study its influence on the structural, electronic, and magnetic properties of defective bulk and strained thin-film structures. Our results show that a self-consistentU improves the description of stoichiometric bulk SrMnO3 with respect to generalized gradient approximation (GGA) or GGA+U calculations using an empiricalU. For defective systems,U changes as a function of the distance of the Hubbard site from the defect, its oxidation state, and the magnetic phase of the bulk structure. Taking into account this dependence, in turn, affects the computed defect formation energies and the predicted strain- and/or defect-induced magnetic phase transitions, especially when occupied localized states appear in the band gap of the material upon defect creation.
2019
Applied Physics/Condensed Matter/Materials Science encompasses the resources of three related disciplines: Applied Physics, Condensed Matter Physics, and Materials Science. The applied physics resources are concerned with the applications of topics in condensed matter as well as optics, vacuum science, lasers, electronics, cryogenics, magnets and magnetism, acoustical physics and mechanics. The condensed matter physics resources are concerned with the study of the structure and the thermal, mechanical, electrical, magnetic and optical properties of condensed matter. They include superconductivity, surfaces, interfaces, thin films, dielectrics, ferroelectrics and semiconductors. The materials science resources are concerned with the physics and chemistry of materials and include ceramics, composites, alloys, metals and metallurgy, nanotechnology, nuclear materials, adhesion and adhesives. Resources dealing with polymeric materials are listed in the Organic Chemistry/Polymer Science category.
Esperti anonimi
Inglese
Internazionale
ELETTRONICO
99
9
094102
12
http://harvest.aps.org/bagit/articles/10.1103/PhysRevB.99.094102/apsxml
5
info:eu-repo/semantics/article
262
Ricca, C.; Timrov, I.; Cococcioni, M.; Marzari, N.; Aschauer, U.
1 Contributo su Rivista::1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/1265386
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