Raman scattering is an effective tool for the investigation of the strain state of crystalline solids. In this brief review, we show how the analysis of the GaAs-like longitudinal optical phonon frequency allowed to map the strain behavior across interfaces in planar heterostructures consisting of GaAsN wires embedded in GaAsN:H matrices. Moreover, we recently showed how the evolution of the longitudinal optical frequency with increasing H dose strongly depends on polarization geometry. In a specific geometry, we observed a relaxation of the GaAs selection rules. We also present new results which demonstrate how laser irradiation intensity-even at low levels-may affect the line shape of the GaAs-like spectral features in GaAsN hydrogenated materials.
Micro-Raman mapping of the strain field in GaAsN/GaAsN:H planar heterostructures: A brief review and recent evolution
Giulotto E.
;Geddo M.
2019-01-01
Abstract
Raman scattering is an effective tool for the investigation of the strain state of crystalline solids. In this brief review, we show how the analysis of the GaAs-like longitudinal optical phonon frequency allowed to map the strain behavior across interfaces in planar heterostructures consisting of GaAsN wires embedded in GaAsN:H matrices. Moreover, we recently showed how the evolution of the longitudinal optical frequency with increasing H dose strongly depends on polarization geometry. In a specific geometry, we observed a relaxation of the GaAs selection rules. We also present new results which demonstrate how laser irradiation intensity-even at low levels-may affect the line shape of the GaAs-like spectral features in GaAsN hydrogenated materials.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
