Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10^11 cm^2 are found to be in good agreement with the theoretically calculated distribution of the nonionizing energy deposited in the device substrate.
Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs
Ratti L.
;Vacchi C.
2019-01-01
Abstract
Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10^11 cm^2 are found to be in good agreement with the theoretically calculated distribution of the nonionizing energy deposited in the device substrate.File in questo prodotto:
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