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Noise degradation induced by γ-rays on P- and N-channel junction field-effect transistors

RATTI, LODOVICO;SPEZIALI, VALERIA
1999-01-01
1999
The Electrical and Electronics Engineering category covers resources concerned with applications of electricity, generally those involving current flow through conductors, as in motors and generators. This category also covers the examination of the conduction of electricity through gases or a vacuum as well as through semiconducting materials. Topics include image and signal processing, electromagnetics, electronic components and materials, microwave technology, and microelectronics.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
sì
WOS:000083063000005
2-s2.0-0033207144
Esperti anonimi
Inglese
Internazionale
STAMPA
46
1294
1299
6
ionizing radiation effects; junction field-effect transistor; low-noise design; Lorentizan noise
no
4
info:eu-repo/semantics/article
262
Manfredi, P. F.; Ratti, Lodovico; Re, V.; Speziali, Valeria
1 Contributo su Rivista::1.1 Articolo in rivista
none
1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/131552
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