This paper presents a study of the ionizing radiation tolerance of 0.13 um CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with 60Co  gamma-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.
Total Ionizing Dose Effects on the Noise Performances of a 0.13 um CMOS Technology
RATTI, LODOVICO;SPEZIALI, VALERIA;
2006-01-01
Abstract
This paper presents a study of the ionizing radiation tolerance of 0.13 um CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with 60Co  gamma-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.File in questo prodotto:
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