The carrier lifetime in SiGe planar waveguides with Si cladding was measured with a pump-and-probe technique, using an ultrashort 810 nm laser pulse and a CW 1.55 mu m probe, as a function of layer thickness d and Ge concentration x. The measured lifetimes are in the range of 20-90 ns. The obtained interface recombination velocity S is a growing function of both d and x, taking values in the range from 300 to 4000 cm/s.
Measurement of the lifetime of photo-generated free carriers in Si-Ge waveguides
TRITA, ANDREA;CRISTIANI, ILARIA;DEGIORGIO, VITTORIO;
2007-01-01
Abstract
The carrier lifetime in SiGe planar waveguides with Si cladding was measured with a pump-and-probe technique, using an ultrashort 810 nm laser pulse and a CW 1.55 mu m probe, as a function of layer thickness d and Ge concentration x. The measured lifetimes are in the range of 20-90 ns. The obtained interface recombination velocity S is a growing function of both d and x, taking values in the range from 300 to 4000 cm/s.File in questo prodotto:
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