Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0-19 GPa and 0-14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P-*similar to 10 GPa whereas subtle modifications of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap filling, are observed for P > P-*. Differently from P=0, where the VO2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.

Evidence of a pressure-induced metallization process in monoclinic VO2

MALAVASI, LORENZO;
2007-01-01

Abstract

Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0-19 GPa and 0-14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P-*similar to 10 GPa whereas subtle modifications of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap filling, are observed for P > P-*. Differently from P=0, where the VO2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.
2007
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Esperti anonimi
Inglese
Internazionale
STAMPA
98
19
196406
HIGH PRESSURE; VANADIUM OXIDE; RAMAN SPECTROSCOPY
no
8
info:eu-repo/semantics/article
262
E., Arcangeletti; L., Baldassarre; D., Di Castro; S., Lupi; Malavasi, Lorenzo; C., Marini; A., Perucchi; P., Postorino
1 Contributo su Rivista::1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/139786
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