In order to produce a step forward towards the monolithic integration of III-V and IV compounds in multijunction solar cells, a first assessment of SiGeSn deposition in a metal organic vapour phase epitaxy (MOVPE) chamber also used for III-V growth has been carried out. The study brings insights on several aspects of the MOVPE SiGeSn growth in order to get a better control of SiGeSn composition and to obtain epitaxial layers with improved morphology. In particular, it is shown that the gas source Si2H6 is more influenced by the growth temperature compared to GeH4 and SnCl4, moreover, its competition with SnCl4 makes it difficult to incorporate Si in SiGeSn, as SnCl4 partial pressure is increased. SiGeSn morphology is shown to be strongly dependent on temperature, As carry-over and growth rate. A new growth model is introduced in order to explain the importance of the adatom bond lengths in inhibiting tin segregation when SiGeSn is grown at relatively high growth temperatures (>480 °C). In order to investigate the photovoltaic behaviour of SiGeSn, a single-junction GaAs/InGaP/SiGeSn/Ge functional device has been manufactured and characterized by external quantum efficiency (EQE) and current-voltage measurements. The experimental and the simulated EQE show the higher absorption coefficient of SiGeSn with respect to Ge, which allows using SiGeSn layers with a thickness three times lower than Ge to produce the same photovoltaic current.
Results on MOVPE SiGeSn deposition for the monolithic integration of III-V and IV elements in multi-junction solar cells
Castagnetti N.;Patrini M.;Andreani L. C.;
2021-01-01
Abstract
In order to produce a step forward towards the monolithic integration of III-V and IV compounds in multijunction solar cells, a first assessment of SiGeSn deposition in a metal organic vapour phase epitaxy (MOVPE) chamber also used for III-V growth has been carried out. The study brings insights on several aspects of the MOVPE SiGeSn growth in order to get a better control of SiGeSn composition and to obtain epitaxial layers with improved morphology. In particular, it is shown that the gas source Si2H6 is more influenced by the growth temperature compared to GeH4 and SnCl4, moreover, its competition with SnCl4 makes it difficult to incorporate Si in SiGeSn, as SnCl4 partial pressure is increased. SiGeSn morphology is shown to be strongly dependent on temperature, As carry-over and growth rate. A new growth model is introduced in order to explain the importance of the adatom bond lengths in inhibiting tin segregation when SiGeSn is grown at relatively high growth temperatures (>480 °C). In order to investigate the photovoltaic behaviour of SiGeSn, a single-junction GaAs/InGaP/SiGeSn/Ge functional device has been manufactured and characterized by external quantum efficiency (EQE) and current-voltage measurements. The experimental and the simulated EQE show the higher absorption coefficient of SiGeSn with respect to Ge, which allows using SiGeSn layers with a thickness three times lower than Ge to produce the same photovoltaic current.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
