This letter proposes an ultralow-power mixer-first front-end using voltage-mode boosting. The voltage gain is achieved passively by using capacitive stacking. By employing N-path filtering technique, this front-end achieves high out-of-band (OOB) rejection which results in high in/OOB linearity. A prototype, composed of four-paths with six stages of switched capacitors, is fabricated in 28-nm CMOS technology, and achieves 29-dB gain, 5.7-dB noise figure (NF) and +10-dBm OOB-IIP3 while consuming less than 140μW.
A 140-μW Front-End with 5.7-dB NF and +10-dBm OOB-IIP3 Using Voltage-Mode Boosting Mixer
Mohammadpour A.;Manstretta D.;Castello R.
2021-01-01
Abstract
This letter proposes an ultralow-power mixer-first front-end using voltage-mode boosting. The voltage gain is achieved passively by using capacitive stacking. By employing N-path filtering technique, this front-end achieves high out-of-band (OOB) rejection which results in high in/OOB linearity. A prototype, composed of four-paths with six stages of switched capacitors, is fabricated in 28-nm CMOS technology, and achieves 29-dB gain, 5.7-dB noise figure (NF) and +10-dBm OOB-IIP3 while consuming less than 140μW.File in questo prodotto:
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