Integrated waveguiding devices based on silicon oxynitride (SiON) are appealing for their relatively high refractive index contrast and broadband transparency. The lack of two photon absorption at telecom wavelengths and the possibility to fabricate low loss waveguides make SiON an ideal platform for on-chip nonlinear optics and for the realization of reconfigurable integrated quantum lightwave circuits. Despite this, very few studies on its linear and nonlinear optical properties have been reported so far. In this work, we measured the thermo-optic coefficient dn/dT and the nonlinear refractive index n2 of relatively high (n ∼ 1.83 at a wavelength of 1.55 μm) refractive index SiON by using racetrack resonators. These parameters have been determined to be dndT=(1.84±0.17)× 10-5 K-1 and n2 = (7 ± 1) × 10-16 cm2W-1.
Thermo-optic coefficient and nonlinear refractive index of silicon oxynitride waveguides
Borghi M.;
2018-01-01
Abstract
Integrated waveguiding devices based on silicon oxynitride (SiON) are appealing for their relatively high refractive index contrast and broadband transparency. The lack of two photon absorption at telecom wavelengths and the possibility to fabricate low loss waveguides make SiON an ideal platform for on-chip nonlinear optics and for the realization of reconfigurable integrated quantum lightwave circuits. Despite this, very few studies on its linear and nonlinear optical properties have been reported so far. In this work, we measured the thermo-optic coefficient dn/dT and the nonlinear refractive index n2 of relatively high (n ∼ 1.83 at a wavelength of 1.55 μm) refractive index SiON by using racetrack resonators. These parameters have been determined to be dndT=(1.84±0.17)× 10-5 K-1 and n2 = (7 ± 1) × 10-16 cm2W-1.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
