This paper introduces a bipolar junction transistor (BJT)-based CMOS temperature-to-digital converter (TDC) that demonstrates an accuracy of ±1.45°C (3σ) within a temperature range of -55°C to 125°C, achieved without the need for calibration. This result is attributed to the implementation of a second-order curvature compensation technique, which utilizes a switched capacitor integral circuit within the bandgap reference circuit. This approach effectively mitigates higher-order reference voltage errors, enhancing overall precision. Additionally, the paper incorporates dynamic element matching (DEM) and auto-zeroing techniques, applied in successive amplification stages, to minimize errors originating from current mirror mismatches and operational amplifier offset voltages, respectively. The described BJT-based sensor features a 13-bit successive-approximationregister analog-to-digital converter (SAR ADC), comprising a 5-bit capacitive array and an 8-bit resistor-capacitor hybrid array, designed to monitor and digitally record temperature data. The proposed design operates within a supply voltage range of 2.7V to 5.5V and is realized using a 0.6 μm BJT process, ultimately achieving a resolution of 29.7 mK.

A 13-bit Temperature Sensor with a ±1.45°C (3σ) Inaccuracy from -55°C to 125°C

Aprile A.;Bonizzoni E.;
2024-01-01

Abstract

This paper introduces a bipolar junction transistor (BJT)-based CMOS temperature-to-digital converter (TDC) that demonstrates an accuracy of ±1.45°C (3σ) within a temperature range of -55°C to 125°C, achieved without the need for calibration. This result is attributed to the implementation of a second-order curvature compensation technique, which utilizes a switched capacitor integral circuit within the bandgap reference circuit. This approach effectively mitigates higher-order reference voltage errors, enhancing overall precision. Additionally, the paper incorporates dynamic element matching (DEM) and auto-zeroing techniques, applied in successive amplification stages, to minimize errors originating from current mirror mismatches and operational amplifier offset voltages, respectively. The described BJT-based sensor features a 13-bit successive-approximationregister analog-to-digital converter (SAR ADC), comprising a 5-bit capacitive array and an 8-bit resistor-capacitor hybrid array, designed to monitor and digitally record temperature data. The proposed design operates within a supply voltage range of 2.7V to 5.5V and is realized using a 0.6 μm BJT process, ultimately achieving a resolution of 29.7 mK.
2024
Electrical & Electronics Engineering
Inglese
Internazionale
ELETTRONICO
24
20
1
1
1
Auto-zeroing; Calibration; Curvature Compensation; Dynamic Element Matching (DEM); Fans; Sensors; Successive-Approximation-Register Analog-to-Digital Converter (SAR ADC); Temperature distribution; Temperature measurement; Temperature sensors; Temperature-to-Digital-converter (TDC); Voltage
https://doi.org/10.1109/JSEN.2024.3411649
12
info:eu-repo/semantics/article
262
Fan, H.; Wu, B.; Che, H.; Yu, R.; Wang, H.; Wang, H.; Wang, C.; Aprile, A.; Bonizzoni, E.; Wang, H.; Feng, Q.; Wei, Q.
1 Contributo su Rivista::1.1 Articolo in rivista
none
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/1508546
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact