This paper studies the effect of high levels of ionizing radiation on the analog parameters, with particular emphasis on the small signal and noise characteristics, of MOSFET devices belonging to a 28 nm bulk CMOS technology. The effects of total ionizing dose (TID) on drain leakage current, threshold voltage, transconductance, gate leakage current, intrinsic gain, and 1/f noise are studied. Post-irradiation annealing reverses the performance degradation of some analog parameters by neutralizing oxide-trapped charge. The results show the extreme radiation hardness of this technology node, proving its applicability in high energy physics experiments and photon science applications.
Ionizing Radiation Effects of 3 Grad TID on Analog and Noise Performance of 28nm CMOS Technology
Traversi G.;Gaioni L.;Ratti L.;
2025-01-01
Abstract
This paper studies the effect of high levels of ionizing radiation on the analog parameters, with particular emphasis on the small signal and noise characteristics, of MOSFET devices belonging to a 28 nm bulk CMOS technology. The effects of total ionizing dose (TID) on drain leakage current, threshold voltage, transconductance, gate leakage current, intrinsic gain, and 1/f noise are studied. Post-irradiation annealing reverses the performance degradation of some analog parameters by neutralizing oxide-trapped charge. The results show the extreme radiation hardness of this technology node, proving its applicability in high energy physics experiments and photon science applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
