Analysis and development of novel supply and driving features for high efficiency power switches

This dissertation consists of two main topics that address the challenges and opportunities in the field of power electronics. Firstly, the development and characterization of low gate energy power switches, focusing on power MOSFETs and IGBTs, designed to address the challenges of modern power electronics. The study highlights the integration of a 68 nF silicon capacitor (SilCap) into a compact QFN package co-packaging low gate energy power MOSFETs and gate driver, enabling efficient bootstrap circuit operation and reducing passive component sizes. Experimental results demonstrate the module's ability to handle rated currents up to 2 A across various PWM frequencies, including transient overload conditions up to 1.5 times the nominal current. The analysis has been also extended to a novel low gate energy IGBT with a gate voltage of 1.5 V, allowing significant reduction of conduction and switching losses compared to conventional IGBTs. Challenges such as parasitic turn-on events are mitigated through advanced gate driver architectures, including Miller clamps and custom voltage regulation. The findings underscore the potential of these technologies for future power electronic systems, with recommendations for further improvements and applications. The second part introduces a novel methodology for driving Silicon Carbide (SiC) power switches using a current source gate driver, exploring two distinct driving strategies: single-level and multi-level current source driving. The single-level approach simplifies implementation and enables open-loop control of voltage slew rate, independent of load current, leading to a significant reduction of switching losses. Conversely, the multi-level strategy, though more complex, allows nanosecond-scale gate current variation during switching events, minimizing both switching losses and electromagnetic interference (EMI). This approach also defines a novel transfer function between switching losses and EMI, a critical trade-off for power electronic designers. Focusing primarily on the turn-on transition, the study presents a detailed analysis of obtained experimental results, highlighting the benefits and challenges of the proposed driving strategies. The findings underscore the importance of advanced driving techniques in maximizing the efficiency and reliability of SiC power switches, particularly in high-power density and high-efficiency applications such as electric vehicles. This research contributes to the ongoing development of optimized control methods for SiC-based systems, addressing the growing demand for high-performance power electronics The findings of this research have the potential to make life easier, safer, and greener by enabling the development of more efficient and reliable power electronic systems. By advancing the state-of-the-art in power electronics, this dissertation contributes to the creation of innovative solutions for a wide range of applications, including renewable energy systems, electric vehicles, and industrial power supplies.