In this work, we report on experimental demonstration of all-optical switching in a silicon-on-insulator photonic wire nanocavity operating at telecom wavelengths. The switching is performed with a control pulse energy as low as ∼ 0.1 pJ on a cavity device that presents very high signal transmission, an ultra-high quality-factor, almost diffraction-limited modal volume and a footprint of only 5 microns squared. High-speed modulation of the cavity mode is achieved by means of optical injection of free carriers using a nanosecond pulsed laser. Experimental results are interpreted by means of finite-difference time-domain simulations. The possibility of using this device as a logic gate is also demonstrated.

All-optical switching in Silicon-on-Insulator photonic wire nanocavities

BELOTTI, MICHELE;GALLI, MATTEO;GERACE, DARIO;ANDREANI, LUCIO;GUIZZETTI, GIORGIO;
2010

Abstract

In this work, we report on experimental demonstration of all-optical switching in a silicon-on-insulator photonic wire nanocavity operating at telecom wavelengths. The switching is performed with a control pulse energy as low as ∼ 0.1 pJ on a cavity device that presents very high signal transmission, an ultra-high quality-factor, almost diffraction-limited modal volume and a footprint of only 5 microns squared. High-speed modulation of the cavity mode is achieved by means of optical injection of free carriers using a nanosecond pulsed laser. Experimental results are interpreted by means of finite-difference time-domain simulations. The possibility of using this device as a logic gate is also demonstrated.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/203954
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