The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs doped-channel heterostructure field-effect transistors (HFETs) both through measurements and two-dimensional (2-D) device simulations. The kink is shown to arise from the interaction of surface deep acceptors with impact-ionization-generated holes, the latter partially discharging the deep levels and therefore leading to conductive-channel widening and to drain-current increase. Under pulsed operation, kink dynamics is governed by hole emission, and capture phenomena, prevailing at low and high drain-source voltages, respectively.
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs
MAZZANTI, ANDREA;
2002-01-01
Abstract
The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs doped-channel heterostructure field-effect transistors (HFETs) both through measurements and two-dimensional (2-D) device simulations. The kink is shown to arise from the interaction of surface deep acceptors with impact-ionization-generated holes, the latter partially discharging the deep levels and therefore leading to conductive-channel widening and to drain-current increase. Under pulsed operation, kink dynamics is governed by hole emission, and capture phenomena, prevailing at low and high drain-source voltages, respectively.File in questo prodotto:
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