Temperature increase is shown to impact the turn-on waveforms of AlGaAs/GaAs heterostructure field-effect transistors in a non-trivial way, resulting in reduced drain current fast change but shortened drain current transient. Two-dimensional device simulations accounting for hole traps at the ungated recess surface provide a consistent physical explanation for the observed behaviour.

Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs

MAZZANTI, ANDREA;
2003-01-01

Abstract

Temperature increase is shown to impact the turn-on waveforms of AlGaAs/GaAs heterostructure field-effect transistors in a non-trivial way, resulting in reduced drain current fast change but shortened drain current transient. Two-dimensional device simulations accounting for hole traps at the ungated recess surface provide a consistent physical explanation for the observed behaviour.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/208873
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