Results are presented from gate-lag, transconductance (g(m)) frequency dispersion and current deep level transient spectroscopy (I-DLTS) experiments, allowing consistent indications about energy, location, and physical behaviour of deep-level traps in AlGaAs-GaAs hetero-structure field-effect transistors (HFETs) to be inferred. Traps responsible for DC-to-RF dispersion effects at operational temperatures are in particular localised and characterised.

Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs

MAZZANTI, ANDREA;
2003-01-01

Abstract

Results are presented from gate-lag, transconductance (g(m)) frequency dispersion and current deep level transient spectroscopy (I-DLTS) experiments, allowing consistent indications about energy, location, and physical behaviour of deep-level traps in AlGaAs-GaAs hetero-structure field-effect transistors (HFETs) to be inferred. Traps responsible for DC-to-RF dispersion effects at operational temperatures are in particular localised and characterised.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/208876
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