Results are presented from gate-lag, transconductance (g(m)) frequency dispersion and current deep level transient spectroscopy (I-DLTS) experiments, allowing consistent indications about energy, location, and physical behaviour of deep-level traps in AlGaAs-GaAs hetero-structure field-effect transistors (HFETs) to be inferred. Traps responsible for DC-to-RF dispersion effects at operational temperatures are in particular localised and characterised.
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs
MAZZANTI, ANDREA;
2003-01-01
Abstract
Results are presented from gate-lag, transconductance (g(m)) frequency dispersion and current deep level transient spectroscopy (I-DLTS) experiments, allowing consistent indications about energy, location, and physical behaviour of deep-level traps in AlGaAs-GaAs hetero-structure field-effect transistors (HFETs) to be inferred. Traps responsible for DC-to-RF dispersion effects at operational temperatures are in particular localised and characterised.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
