We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j–Vcharacteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices
Electron transport across a Gaussian superlattice
BELLANI, VITTORIO
1999-01-01
Abstract
We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j–Vcharacteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlatticesFile in questo prodotto:
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