A 1.2 V 10-bit 100 MS/s Successive Approximation (SA) ADC is presented. The scheme achieves high-speed and low-power operation thanks to the reference-free technique that avoids the static power dissipation of an on-chip reference generator. Moreover, the use of a common-mode based charge recovery switching method reduces the switching energy and improves the conversion linearity. A variable self-timed loop optimizes the reset time of the preamplifier to improve the conversion speed. Measurement results on a 90 nm CMOS prototype operated at 1.2 V supply show 3 mW total power consumption with a peak SNDR of 56.6 dB and a FOM of 77 fJ/conv-step.

10-bit 100-MS/s Reference-Free SAR ADC in 90 nm CMOS

MALOBERTI, FRANCO
2010-01-01

Abstract

A 1.2 V 10-bit 100 MS/s Successive Approximation (SA) ADC is presented. The scheme achieves high-speed and low-power operation thanks to the reference-free technique that avoids the static power dissipation of an on-chip reference generator. Moreover, the use of a common-mode based charge recovery switching method reduces the switching energy and improves the conversion linearity. A variable self-timed loop optimizes the reset time of the preamplifier to improve the conversion speed. Measurement results on a 90 nm CMOS prototype operated at 1.2 V supply show 3 mW total power consumption with a peak SNDR of 56.6 dB and a FOM of 77 fJ/conv-step.
2010
The Electrical and Electronics Engineering category covers resources concerned with applications of electricity, generally those involving current flow through conductors, as in motors and generators. This category also covers the examination of the conduction of electricity through gases or a vacuum as well as through semiconducting materials. Topics include image and signal processing, electromagnetics, electronic components and materials, microwave technology, and microelectronics.
Sì, ma tipo non specificato
Inglese
Internazionale
STAMPA
45
6
1111
1121
CHARGE-RECOVERY; REFERENCE-FREE; SWITCHED TECHNIQUE
7
info:eu-repo/semantics/article
262
Y., Zhu; C. H., Chan; U. F., Chio; S. W., Sin; S. P., U.; R. P., Martins; Maloberti, Franco
1 Contributo su Rivista::1.1 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/211776
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